The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Sep. 06, 2012
Junichi Koezuka, Tochigi, JP;
Shinji Ohno, Atsugi, JP;
Yuichi Sato, Isehara, JP;
Sachiaki Tezuka, Atsugi, JP;
Tomokazu Yokoi, Atsugi, JP;
Yusuke Shino, Atsugi, JP;
Junichi Koezuka, Tochigi, JP;
Shinji Ohno, Atsugi, JP;
Yuichi Sato, Isehara, JP;
Sachiaki Tezuka, Atsugi, JP;
Tomokazu Yokoi, Atsugi, JP;
Yusuke Shino, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.