The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Aug. 08, 2011
Chih-yu Lai, Tainan, TW;
Cheng-ta Wu, Shueishang Township, TW;
Kai-chun Hsu, Yonghe, TW;
Yeur-luen Tu, Taichung, TW;
Ching-chun Wang, Tainan, TW;
Chia-shiung Tsai, Hsin-Chu, TW;
Chih-Yu Lai, Tainan, TW;
Cheng-Ta Wu, Shueishang Township, TW;
Kai-Chun Hsu, Yonghe, TW;
Yeur-Luen Tu, Taichung, TW;
Ching-Chun Wang, Tainan, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes performing a grinding to a backside of a semiconductor substrate, wherein a remaining portion of the semiconductor substrate has a back surface. A treatment is then performed on the back surface using a method selected from the group consisting essentially of a dry treatment and a plasma treatment. Process gases that are used in the treatment include oxygen (O). The plasma treatment is performed without vertical bias in a direction perpendicular to the back surface.