The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Nov. 20, 2012
SK Hynix Inc., Icheon-si, KR;
Sung Hyun Oh, Cheongju-si, KR;
Yoon Suk Hyun, Yongin-si, KR;
SK Hynix Inc., Icheon, KR;
Abstract
An extreme ultra violet (EUV) mask is disclosed, which prevents defects from shot overlap encountered in wafer exposure as well as reflection of unnecessary EUV and DUV generated in a black border region, such that a pattern CD is reduced and defects are not created. The EUV mask includes a quartz substrate, a multi-layered reflection film formed over the quartz substrate to reflect exposure light, an absorption layer formed over the multi-layered reflection film, a black border region formed over the quartz substrate that does not include the multi-layered reflection film, and a blind layer formed in a position including at least one of over the absorption layer, over the quartz substrate, and below the quartz substrate.