The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Feb. 07, 2013
Crocus Technology SA, Grenoble Cedex, FR;
Lucien Lombard, Grenoble, FR;
Kenneth MacKay, Le Sappey en Chartreuse, FR;
Ioan Lucian Prejbeanu, Seyssinet Pariset, FR;
Crocus Technology SA, Grenoble Cedex, FR;
Abstract
The present disclosure concerns a self-referenced MRAM element, comprising a magnetic tunnel junction having a magnetoresistance, comprising: a storage layer having a storage magnetization that is pinned along a first direction when the magnetic tunnel junction is at a low temperature threshold; a sense layer having a sense magnetization; and a tunnel barrier layer included between the storage layer and the sense layer; and an aligning device arranged for providing the sense magnetization with a magnetic anisotropy along a second direction that is substantially perpendicular to the first direction such that the sense magnetization is adjusted about the second direction; the aligning device being further arranged such that, when a first read magnetic field is provided, a resistance variation range of the magnetic tunnel junction is at least about 20% of the magnetoresistance. The self-referenced MRAM cell can be read with an increased reliability and has reducing power consumption.