The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Sep. 10, 2013
Qualcomm Incorporated, San Diego, CA (US);
Hari M. Rao, San Diego, CA (US);
Jung Pil Kim, San Diego, CA (US);
Seung H. Kang, San Diego, CA (US);
Xiaochun Zhu, San Diego, CA (US);
Tae Hyun Kim, San Diego, CA (US);
Kangho Lee, San Diego, CA (US);
Xia Li, San Diego, CA (US);
Wah Nam Hsu, San Diego, CA (US);
Wuyang Hao, San Jose, CA (US);
Jungwon Suh, San Diego, CA (US);
Nicholas K. Yu, San Diego, CA (US);
Matthew Michael Nowak, San Diego, CA (US);
Steven M. Millendorf, San Diego, CA (US);
Asaf Ashkenazi, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A memory device includes a magnetic tunnel junction (MTJ) bitcell. The MTJ bitcell includes a first MTJ and a second MTJ. The memory device further includes programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell. The non-reversible state corresponds to a value of the MTJ bitcell that is determined by comparing a first value read at the first MTJ and a second value read at the second MTJ.