The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Jun. 04, 2012
Tao Feng, Santa Clara, CA (US);
Yueh-se Ho, Sunnyvale, CA (US);
Tao Feng, Santa Clara, CA (US);
Yueh-Se Ho, Sunnyvale, CA (US);
Alpha & Omega Semiconductor, Inc., Sunnyvale, CA (US);
Abstract
A virtually substrate-less composite power semiconductor device (VSLCPSD) and method are disclosed. The VSLCPSD has a power semiconductor device (PSD), a front-face device carrier (FDC) made out of a carrier material and an intervening bonding layer (IBL). Both carrier and IBL material can be conductive or non-conductive. The PSD has back substrate portion, front semiconductor device portion with patterned front-face device metallization pads and a virtually diminishing thickness T. The FDC has patterned back-face carrier metallizations contacting the front-face device metallization pads, patterned front-face carrier metallization pads and numerous parallelly connected through-carrier conductive vias respectively connecting the back-face carrier metallizations to the front-face carrier metallization pads. The FDC thickness Tis large enough to provide structural rigidity to the VSLCPSD. The diminishing thickness Teffects a low back substrate resistance and the through-carrier conductive vias effect a low front-face contact resistance to the front-face device metallization pads.