The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Feb. 13, 2013
Applicant:
Renesas Electronics Corporation, Kanagawa, JP;
Inventor:
Hiroshi Takeda, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a vertical transistor, to raise a drain withstand voltage while lowering an on-resistance. A drift layeris formed above a drain layerand has a first conductivity type. A gate insulating filmis formed on a side wall of a concave portionA bottom surface insulating filmis formed on a bottom surface of the concave portionA gate electrodeis buried in the concave portionA source layeris formed in a channel layerA first conductivity type layeris located between the channel layerand the drift layerAn impurity concentration of the first conductivity type layeris higher than an impurity concentration of the drift layer