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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8791566 B1

PDFFull Text
Date of Patent:
Jul. 29, 2014

Filed:

Feb. 05, 2010

Aluminum nitride substrate, aluminum nitride circuit board, semiconductor apparatus, and method for manufacturing aluminum nitride substrate

Applicants:

Haruhiko Yamaguchi, Yokohama, JP;

Yoshiyuki Fukuda, Ayase, JP;

Inventors:

Haruhiko Yamaguchi, Yokohama, JP;

Yoshiyuki Fukuda, Ayase, JP;

Assignees:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Materials Co., Ltd., Yokohama-shi, JP;

Attorney:

Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Mohammed Shamsuzzaman

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); C04B 35/581 (2006.01); H01L 23/15 (2006.01); C04B 37/02 (2006.01); H05K 1/03 (2006.01);
U.S. Cl.
CPC ...
C04B 35/581 (2013.01); C04B 2235/85 (2013.01); C04B 2237/126 (2013.01); C04B 2235/6581 (2013.01); H01L 2924/13055 (2013.01); H05K 1/0306 (2013.01); C04B 2235/3229 (2013.01); C04B 2235/3222 (2013.01); C04B 2235/80 (2013.01); C04B 2237/125 (2013.01); C04B 2235/786 (2013.01); C04B 2235/77 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/963 (2013.01); C04B 2235/96 (2013.01); C04B 2237/408 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/6562 (2013.01); H01L 23/15 (2013.01); C04B 37/026 (2013.01); C04B 2237/366 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/764 (2013.01); C04B 2235/661 (2013.01); C04B 2235/3225 (2013.01); C04B 2237/706 (2013.01); C04B 2235/9607 (2013.01); C04B 2237/127 (2013.01);
Abstract

The present invention provides an aluminum nitride substrate and an aluminum nitride circuit board having excellent insulation characteristics and heat dissipation properties and having high strength, a semiconductor apparatus, and a method for manufacturing an aluminum nitride substrate. An aluminum nitride substrate according to the present invention is an aluminum nitride substrate having aluminum nitride as a main component and comprising a polycrystal containing a plurality of aluminum nitride grains, and complex oxide grains being present at grain boundaries of the aluminum nitride grains and including a rare earth element and aluminum, wherein the aluminum nitride grains have a maximum grain size of 10 μm or less, the complex oxide grains have a maximum grain size smaller than the maximum grain size of the aluminum nitride grains, the number of the complex oxide grains having a grain size of 1 μm or more being present in a field of view of 100 μm×100 μm of a surface of the aluminum nitride substrate observed is 40 or more, the aluminum nitride substrate has a bending strength of 400 MPa or more in an unpolished state after firing, and the aluminum nitride substrate has a volume resistivity of 10Ωm or more.

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