The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2014

Filed:

Mar. 27, 2012
Applicants:

Jun Nishimura, Kuwana, JP;

Nobuaki Yasutake, Yokkaichi, JP;

Takayuki Okamura, Machida, JP;

Inventors:

Jun Nishimura, Kuwana, JP;

Nobuaki Yasutake, Yokkaichi, JP;

Takayuki Okamura, Machida, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/868 (2006.01); H01L 27/102 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1021 (2013.01); H01L 29/868 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/1675 (2013.01); H01L 45/146 (2013.01); H01L 27/2409 (2013.01); H01L 27/2481 (2013.01);
Abstract

A semiconductor memory device includes a cell array layer including a first wire, a memory cell stacked on the first wire, and a second wire formed on the memory cell. The memory cell includes a variable resistance element and a current control element The current control element includes a first conductivity-type semiconductor into which a first impurity is doped, an i-type semiconductor in contact with the first conductivity-type semiconductor, a second conductivity-type semiconductor into which a second impurity is doped, and an impact ionization acceleration unit being formed between the i-type semiconductor and one of the first conductivity-type semiconductor and the second conductivity-type semiconductor.


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