The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2014

Filed:

Mar. 04, 2011
Applicants:

Peter Baars, Dresden, DE;

Till Schloesser, Dresden, DE;

Vivien Schroeder, Ottendorf-Okrilla, DE;

Inventors:

Peter Baars, Dresden, DE;

Till Schloesser, Dresden, DE;

Vivien Schroeder, Ottendorf-Okrilla, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 21/20 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/02697 (2013.01); H01L 21/28 (2013.01); H01L 27/10852 (2013.01);
Abstract

When forming capacitive structures in a metallization system, such as in a dynamic RAM area, placeholder metal regions may be formed together with 'regular' metal features, thereby achieving a very efficient overall process flow. At a certain manufacturing stage, the metal of the placeholder metal region may be removed on the basis of a wet chemical etch recipe followed by the deposition of the electrode materials and the dielectric materials for the capacitive structure without unduly affecting other portions of the metallization system. In this manner, very high capacitance values may be realized on the basis of a very efficient overall manufacturing flow.


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