The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2014
Filed:
Jun. 05, 2006
Yee-chia Yeo, Hsin-Chu, TW;
Ping-wei Wang, Hsin-Chu, TW;
Hao-yu Chen, Kaohsiung, TW;
Fu-liang Yang, Hsin-Chu, TW;
Chenming HU, Hsin-Chu, TW;
Yee-Chia Yeo, Hsin-Chu, TW;
Ping-Wei Wang, Hsin-Chu, TW;
Hao-Yu Chen, Kaohsiung, TW;
Fu-Liang Yang, Hsin-Chu, TW;
Chenming Hu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure includes of a plurality of semiconductor fins overlying an insulator layer, a gate dielectric overlying a portion of said semiconductor fin, and a gate electrode overlying the gate dielectric. Each of the semiconductor fins has a top surface, a first sidewall surface, and a second sidewall surface. Dopant ions are implanted at a first angle (e.g., greater than about 7°) with respect to the normal of the top surface of the semiconductor fin to dope the first sidewall surface and the top surface. Further dopant ions are implanted with respect to the normal of the top surface of the semiconductor fin to dope the second sidewall surface and the top surface.