The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Jun. 30, 2009
Erich F. Haratsch, Bethlehem, PA (US);
Milos Ivkovic, Sunnyvale, CA (US);
Victor Krachkovsky, Allentown, PA (US);
Nenad Miladinovic, Campbell, CA (US);
Andrei Vityaev, San Jose, CA (US);
Johnson Yen, Fremont, CA (US);
Erich F. Haratsch, Bethlehem, PA (US);
Milos Ivkovic, Sunnyvale, CA (US);
Victor Krachkovsky, Allentown, PA (US);
Nenad Miladinovic, Campbell, CA (US);
Andrei Vityaev, San Jose, CA (US);
Johnson Yen, Fremont, CA (US);
LSI Corporation, San Jose, CA (US);
Abstract
Methods and apparatus are provided for soft demapping and intercell interference mitigation in flash memories. In one variation, a target cell in a flash memory device capable of storing at least two data levels, s, per cell is read by obtaining a measured read value, r, for at least one target cell in the flash memory; obtaining a value, h, representing data stored for at least one aggressor cell in the flash memory; selecting one or more probability density functions based on a pattern of values stored in at least a portion of the flash memory, wherein the probability density functions comprises pattern-dependent disturbance of one or more aggressor cells on the at least one target cell in the flash memory; evaluating at least one selected probability density function based on the measured read value, r; and computing one or more log likelihood ratios based on a result of the evaluating step.