The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2014

Filed:

Mar. 13, 2012
Applicants:

Wei-ren Chen, Pingtung County, TW;

Te-hsun Hsu, Hsinchu County, TW;

Hsin-ming Chen, Hsinchu, TW;

Inventors:

Wei-Ren Chen, Pingtung County, TW;

Te-Hsun Hsu, Hsinchu County, TW;

Hsin-Ming Chen, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01);
Abstract

The invention provides a nonvolatile memory apparatus. The nonvolatile memory apparatus comprises a plurality of memory cells and a signal generator. The memory cells are arranged in an array, and each of the memory cells has a control gate terminal, a floating gate, a source line terminal, a bit-line terminal, a selected gate terminal and a word-line terminal. The signal generator is coupled to the memory cells. When the nonvolatile memory apparatus executes a programming operation, the signal generator provides a programming signal to the control gate terminals of a plurality of inhibited memory cells among the memory cells. Wherein, the programming signal is a pulse signal with a direct-current (DC) offset voltage.


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