The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Jun. 04, 2013
United Microelectronics Corporation, Hsinchu, TW;
An-Hung Lin, New Taipei, TW;
Wei-Shan Liao, Yunlin County, TW;
Bo-Jui Huang, Hsinchu, TW;
Hong-Ze Lin, Hsinchu, TW;
Ting-Zhou Yan, Hsinchu County, TW;
Wen-Chun Chang, Kaohsiung, TW;
United Microelectronics Corporation, Hsinchu, TW;
Abstract
A Schottky diode having a current leakage protection structure includes a Schottky diode unit, a first isolation portion and a second isolation portion. The Schottky diode unit is defined in a substrate and includes a metalized anode, an active region having dopants of first conductive type, a cathode and at least one isolation structure. The first isolation portion having dopants of second conductive type is formed between substrate and active region, and the first isolation portion includes a first well disposed beneath active region, and a first guard ring surrounding active region and connecting to the first well. The second isolation portion having dopants of first conductive type is formed between substrate and the first isolation portion, and the second isolation portion includes a second well disposed beneath the first well, and a second guard ring surrounding the first guard ring and connecting to the second well.