The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2014

Filed:

Mar. 15, 2012
Applicants:

Masao Iwase, Mie-ken, JP;

Hiroyasu Tanaka, Mie-ken, JP;

Inventors:

Masao Iwase, Mie-ken, JP;

Hiroyasu Tanaka, Mie-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/8247 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a nonvolatile semiconductor memory device includes: a substrate; a memory unit provided on the substrate; and a non-memory unit provided on the substrate. The memory unit includes: a first stacked body including a plurality of first electrode films and a first inter-electrode insulating film, the plurality of first electrode films being stacked along a first axis perpendicular to the major surface, the first inter-electrode insulating film being provided between two of the first electrode films mutually adjacent along the first axis; a first semiconductor layer opposing side surfaces of the first electrode films; a first memory film provided between the first semiconductor layer and the first electrode films; and a first conductive film provided on the first stacked body apart from the first stacked body. The non-memory unit includes a resistance element unit of the same layer as the conductive film.


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