The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8785997 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 22, 2014

Filed:

May. 16, 2012
Applicants:

Hans-joachim Schulze, Taufkirchen, DE;

Alexander Susiti, Stadelbach, AT;

Markus Zundel, Egmating, DE;

Reinhard Ploss, Unterhaching, DE;

Inventors:

Hans-Joachim Schulze, Taufkirchen, DE;

Alexander Susiti, Stadelbach, AT;

Markus Zundel, Egmating, DE;

Reinhard Ploss, Unterhaching, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7809 (2013.01); H01L 29/7802 (2013.01); H01L 29/7811 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01);
Abstract

A semiconductor device includes a semiconductor body including a first surface. The semiconductor device further includes a continuous silicate glass structure over the first surface. A first part of the continuous glass structure over an active area of the semiconductor body includes a first composition of dopants that differs from a second composition of dopants in a second part of the continuous glass structure over an area of the semiconductor body outside of the active area.


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