The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Sep. 07, 2009
Toshiya Yokogawa, Nara, JP;
Ryou Kato, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Ryou Kato, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nitride-based semiconductor light-emitting device according to the present invention has a nitride-based semiconductor multilayer structure. The nitride-based semiconductor multilayer structureincludes: an active layerincluding an AlInGaN crystal layer (where a+b+c=1, a≧0, b≧0 and c≧0); an AlGaN overflow suppressing layer(where d+e=1, d>0, and e≧0); and an AlGaN layer(where f+g=1, f≧0, g≧0 and f<d). The AlGaN overflow suppressing layeris arranged between the active layerand the AlGaN layer. And the AlGaN overflow suppressing layerincludes an In-doped layer that is doped with In at a concentration of 1×10atms/cmto 1×10atms/cm.