The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Dec. 05, 2012
United Microelectronics Corp., Hsin-Chu, TW;
Chieh-Te Chen, Kaohsiung, TW;
Feng-Yi Chang, Tainan, TW;
Chih-Sen Huang, Tainan, TW;
Ching-Wen Hung, Tainan, TW;
Ching-Pin Hsu, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The present invention provides a method for forming a semiconductor structure having a metal connect. A substrate is provided, and a transistor and a first ILD layer are formed thereon. A first contact plug is formed in the first ILD layer to electrically connect the source/drain region. A second ILD layer and a third ILD layer are formed on the first ILD layer. A first opening above the gate and a second opening above the first contact plug are formed, wherein a depth of the first contact plug is deeper than that of the second opening. Next, the first opening and the second opening are deepened. Lastly, a metal layer is filled into the first opening and the second opening to respectively form a first metal connect and a second metal connect.