The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Feb. 09, 2012
Chongying Xu, New Milford, CT (US);
Tianniu Chen, Rocky Hill, CT (US);
Thomas M. Cameron, Newtown, CT (US);
Jeffrey F. Roeder, Brookfield, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Chongying Xu, New Milford, CT (US);
Tianniu Chen, Rocky Hill, CT (US);
Thomas M. Cameron, Newtown, CT (US);
Jeffrey F. Roeder, Brookfield, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Advanced Technology Materials, Inc., Danbury, CT (US);
Abstract
Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp), wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R-Ris the same as or different from one another, with each being independently selected from among hydrogen, C-Calkyl, C-Camino, C-Caryl, C-Calkoxy, C-Calkylsilyl, C-Calkenyl, RRRNNR, wherein R, Rand Rmay be the same as or different from one another and each is independently selected from hydrogen and C-Calkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.