The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Dec. 06, 2012
Taiwan Semiconductor Manufacturing Co. Ltd., Hsin-Chu, TW;
Long-Shih Lin, Zhubei, TW;
Fu-Hsiung Yang, Zhongli, TW;
Kun-Ming Huang, Taipei, TW;
Ming-Yi Lin, Hsin-Chu, TW;
Po-Tao Chu, New Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a method and apparatus to increase breakdown voltage of a semiconductor power device. A bonded wafer is formed by bonding a device wafer to a handle wafer with an intermediate oxide layer. The device wafer is thinned substantially from its original thickness. A power device is formed within the device wafer through a semiconductor fabrication process. The handle wafer is patterned to remove section of the handle wafer below the power device, resulting in a breakdown voltage improvement for the power device as well as a uniform electrostatic potential under reverse biasing conditions of the power device, wherein the breakdown voltage is determined. Other methods and structures are also disclosed.