The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Oct. 28, 2011
Chun-wei Hsu, Taipei, TW;
Po-cheng Huang, Chiayi, TW;
Ren-peng Huang, Changhua County, TW;
Jie-ning Yang, Ping-Tung County, TW;
Chia-lin Hsu, Tainan, TW;
Teng-chun Tsai, Tainan, TW;
Chih-hsun Lin, Ping-Tung County, TW;
Chang-hung Kung, Kaohsiung, TW;
Yen-ming Chen, New Taipei, TW;
Yu-ting LI, Chiayi, TW;
Chun-Wei Hsu, Taipei, TW;
Po-Cheng Huang, Chiayi, TW;
Ren-Peng Huang, Changhua County, TW;
Jie-Ning Yang, Ping-Tung County, TW;
Chia-Lin Hsu, Tainan, TW;
Teng-Chun Tsai, Tainan, TW;
Chih-Hsun Lin, Ping-Tung County, TW;
Chang-Hung Kung, Kaohsiung, TW;
Yen-Ming Chen, New Taipei, TW;
Yu-Ting Li, Chiayi, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the substrate of the resistor region; forming a tank in the STI of the resistor region; and forming a resistor in the tank and on the surface of the STI adjacent to two sides of the tank.