The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Mar. 30, 2009
Hiroyasu Shichi, Tokyo, JP;
Shinichi Matsubara, Chofu, JP;
Norihide Saho, Tsuchiura, JP;
Masahiro Yamaoka, Hachioji, JP;
Noriaki Arai, Hitachinaka, JP;
Hiroyasu Shichi, Tokyo, JP;
Shinichi Matsubara, Chofu, JP;
Norihide Saho, Tsuchiura, JP;
Masahiro Yamaoka, Hachioji, JP;
Noriaki Arai, Hitachinaka, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
An ion beam device according to the present invention includes a gas field ion source () including an emitter tip () supported by an emitter base mount (), a ionization chamber () including an extraction electrode () and being configured to surround the emitter tip (), and a gas supply tube (). A center axis line of the extraction electrode () overlaps or is parallel to a center axis line (A) of the ion irradiation light system, and a center axis line () passing the emitter tip () and the emitter base mount () is inclinable with respect to a center axis line of the ionization chamber (). Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.