The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Feb. 08, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In a semiconductor device, a first contact-diffusion-layer is in a first well to be connected to the first well and extends in a channel width direction of a first transistor in a first well. A second contact-diffusion-layer is in the first well so as to be electrically connected to the first well and extends in a channel-length direction of the first transistor. A first contact on the first contact-diffusion-layer has a shape with a diameter in the channel-width direction larger than that in the channel-length direction when viewed from above the substrate. A second contact on the second contact-diffusion-layer has a shape with a diameter in the channel-width direction smaller than that of the first contact and a diameter in the channel-length direction almost equal to that of the first contact when viewed from above the substrate. A wiring is electrically connected to the first transistor through the second contact.