The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2014

Filed:

Jan. 19, 2012
Applicants:

Pui Chung Simon Law, Hong Kong, HK;

Dan Yang, Hong Kong, HK;

Xunqing Shi, Hong Kong, HK;

Inventors:

Pui Chung Simon Law, Hong Kong, HK;

Dan Yang, Hong Kong, HK;

Xunqing Shi, Hong Kong, HK;

Assignee:

Hong Kong Applied Science and Technology Research Institute Company Limited, Hong Kong Science Park Shatin, New Territories, Hong Kong, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multilayer microelectronic device package includes one or more vertical electrical contacts. At least one semiconductor material layer is provided having one or more electrical devices fabricated therein. An electrical contact pad can be formed on or in the semiconductor material layer. Another material layer is positioned adjacent to the semiconductor material layer and includes a conductive material stud embedded in or bonded to the layer. A via is formed through at least a portion of the semiconductor material layer and the electrical contact pad and into the adjacent layer conducting material stud. The via is constructed such that the via tip terminates within the conducting material stud, exposing the conducting material. A metallization layer is disposed in the via such that the metallization layer contacts both the electrical contact pad and the conducting material stud exposed by the via tip.


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