The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8772906 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 08, 2014

Filed:

Jul. 22, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Matthew J. BrightSky, Pound Ridge, NY (US);

Roger W. Cheek, Somers, NY (US);

Chung H. Lam, Peekskill, NY (US);

Eric A. Joseph, White Plains, NY (US);

Bipin Rajendran, New York, NY (US);

Alejandro G. Schrott, New York, NY (US);

Yu Zhu, West Harrison, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

Memory cell structures for phase change memory. An example memory cell structure comprising includes a bottom electrode comprised of electrically conducting material, and phase change material disposed above the bottom electrode. A layer of thermally insulating material is disposed, at least partially, between the bottom electrode and the phase change material. The thermally insulating material is comprised of Tantalum Oxide. A top electrode is comprised of electrically conducting material.


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