The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
May. 02, 2011
Yiming Huai, Pleasanton, CA (US);
Rajiv Yadav Ranjan, San Jose, CA (US);
Ioan Tudosa, Milpitas, CA (US);
Roger Klas Malmhall, San Jose, CA (US);
Yuchen Zhou, San Jose, CA (US);
Yiming Huai, Pleasanton, CA (US);
Rajiv Yadav Ranjan, San Jose, CA (US);
Ioan Tudosa, Milpitas, CA (US);
Roger Klas Malmhall, San Jose, CA (US);
Yuchen Zhou, San Jose, CA (US);
Avalanche Technology, Inc., Fremont, CA (US);
Abstract
A spin transfer torque memory random access memory (STTMRAM) element is capable of switching states when electrical current is applied thereto for storing data and includes the following layers. An anti-ferromagnetic layer, a fixed layer formed on top of the anti-ferromagnetic layer, a barrier layer formed on top of the second magnetic layer of the fixed layer, and a free layer including a first magnetic layer formed on top of the barrier layer, a second magnetic layer formed on top of the first magnetic layer, a non-magnetic insulating layer formed on top of the second magnetic layer and a third magnetic layer formed on top of the non-magnetic insulating layer. A capping layer is formed on top of the non-magnetic insulating layer.