The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Dec. 03, 2012
Applicant:
Monolithic Power Systems, Inc., San Jose, CA (US);
Inventors:
Ji-Hyoung Yoo, Cupertino, CA (US);
Martin E. Garnett, Los Gatos, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
A high voltage high side DMOS removing the N-buried layer from the DMOS bottom provides lower Ron*A at given breakdown voltage. The high voltage high side DMOS has a P-type substrate, an epitaxial layer, a field oxide, an N-type well region a gate oxide, a gate poly, a P-type base region, a deep P-type region, an N-type lightly doped well region, a first N-type highly doped region, a second N-type highly doped region and a P-type highly doped region.
Yoo, Ji-Hyoung. (2014). High voltage high side dmos and the method for forming thereof (U.S. Patent No. 8772867). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8772867
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile