The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
May. 01, 2012
Applicants:
Hyun-kwan Yu, Suwon-si, KR;
Dong-suk Shin, Yongin-si, KR;
Pan-kwi Park, Incheon, KR;
Ki-eun Kim, Seoul, KR;
Inventors:
Hyun-kwan Yu, Suwon-si, KR;
Dong-suk Shin, Yongin-si, KR;
Pan-kwi Park, Incheon, KR;
Ki-eun Kim, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device includes providing a substrate having a gate structure, a source region, and a drain region formed thereon, and the gate structure includes a gate insulating layer and a gate electrode. The method also includes forming a first stress layer on the substrate, removing the first stress layer, and forming a second stress layer on the substrate.