The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Feb. 01, 2012
I-ming Tseng, Kaohsiung, TW;
Tsung-lung Tsai, Tai-Nan, TW;
Yi-wei Chen, Taichung, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of fabricating an electrical contact comprises the following steps. A substrate having at least a silicon region is provided. At least an insulation layer is formed on the substrate, wherein the insulation layer comprises at least a contact hole which exposes the silicon region. A metal layer is formed on sidewalls and bottom of the contact hole. An annealing process is performed to form a first metal silicide layer in the silicon region nearby the bottom of the contact hole. A conductive layer covering the metal layer and filling up the contact hole is then formed, wherein the first metal silicide layer is transformed into a second metal silicide layer when the conductive layer is formed.