The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Mar. 30, 2012
Hak-lay Chuang, Singapore, SG;
Ming Zhu, Singapore, SG;
Hui-wen Lin, Taiping, TW;
Bao-ru Young, Zhubei, TW;
Hak-Lay Chuang, Singapore, SG;
Ming Zhu, Singapore, SG;
Hui-Wen Lin, Taiping, TW;
Bao-Ru Young, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of semiconductor fabrication including forming a first work function metal layer on a first region of the substrate and forming a metal layer on the first work function metal layer and on a second region of the substrate. A dummy layer is formed on the metal layer. The layers are then patterned to form a first gate structure in the first region and a second gate structure in the second region of the substrate. The dummy layer is then removed to expose the metal layer, which is treated. The treatment may be an oxygen treatment that allows the metal layer to function as a second work function layer.