The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Sep. 03, 2010
Applicants:
Mustafa Pinarbasi, Morgan Hill, CA (US);
James Freitag, Sunnyvale, CA (US);
Jorge Vasquez, San Jose, CA (US);
Inventors:
Mustafa Pinarbasi, Morgan Hill, CA (US);
James Freitag, Sunnyvale, CA (US);
Jorge Vasquez, San Jose, CA (US);
Assignee:
Solopower Systems, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides for new ohmic contact materials and diffusion barriers for Group IBIIIAVIA based solar cell structures, which eliminate two way diffusion while preserving the efficient ohmic contacts between the substrate and the absorber layers.
Pinarbasi, Mustafa. (2014). Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells (U.S. Patent No. 8772076). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8772076
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile