The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Sep. 08, 2011
Applicants:
Jen-pan Wang, Tainan, TW;
Chien-hsuan Liu, Tainan, TW;
Ching-hsien Chen, Kausiung, TW;
Chao-chi Chen, Tainan, TW;
Inventors:
Jen-Pan Wang, Tainan, TW;
Chien-Hsuan Liu, Tainan, TW;
Ching-Hsien Chen, Kausiung, TW;
Chao-Chi Chen, Tainan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method comprises providing a semiconductor substrate having at least one layer of a material over the substrate. A sound is applied to the substrate, such that a sound wave is reflected by a top surface of the layer of material The sound wave is detected using a sensor. A topography of the top surface is determined based on the detected sound wave. The determined topography is used to control an immersion lithography process.