The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2014

Filed:

Jun. 18, 2012
Applicants:

Takayuki Hisaka, Tokyo, JP;

Takahiro Nakamoto, Tokyo, JP;

Toshihiko Shiga, Tokyo, JP;

Koichiro Nishizawa, Tokyo, JP;

Inventors:

Takayuki Hisaka, Tokyo, JP;

Takahiro Nakamoto, Tokyo, JP;

Toshihiko Shiga, Tokyo, JP;

Koichiro Nishizawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes: a semiconductor substrate; an underlying wiring on the semiconductor substrate; a resin film extending to the semiconductor substrate and the underlying wiring, and having a first opening on the underlying wiring; a first SiN film on the underlying wiring and the resin film, and having a second opening in the first opening; an upper layer wiring on the underlying wiring and part of the resin film; and a second SiN film on the upper layer wiring and the resin film, and joined to the first SiN film on the resin film. The upper layer wiring includes a Ti film, connected to the underlying wiring via the first and second openings, and an Au film on the Ti film. The first and second SiN films circumferentially protect the Ti film.


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