The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Mar. 14, 2013
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Eduard A. Cartier, New York, NY (US);
Qingqing Liang, Fishkill, NY (US);
Yue Liang, San Jose, CA (US);
Yanfeng Wang, Fishkill, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
Programmable field effect transistors (FETs) are provided using high-k dielectric metal gate Vt shift effect and methods of manufacturing the same. The method of controlling Vt shift in a high-k dielectric metal gate structure includes applying a current to a gate contact of the high-k dielectric metal gate structure to raise a temperature of a metal forming a gate stack. The temperature is raised beyond a Vt shift temperature threshold for providing an on-state.