The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Dec. 23, 2009
Jacob Christopher Hooker, Hamburg, DE;
Raghunath Singanamalla, Mumbai, IN;
Jasmine Petry, Evere, BE;
Jacob Christopher Hooker, Hamburg, DE;
Raghunath Singanamalla, Mumbai, IN;
Jasmine Petry, Evere, BE;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a semiconductor device that includes a semiconductor substrate having a first region and a second region, a pMOS transistor formed over the first region and an nMOS formed over the second region. The pMOS transistor has a gate structure that includes: an interfacial layer formed over the substrate; a AlOlayer formed over the interfacial layer; and a metal layer including Mo or W formed over the AlOlayer. The nMOS transistor has a gate structure that includes: the interfacial layer formed over the substrate; a DyOlayer formed over the interfacial layer; and the metal layer including Mo or W formed over the DyOlayer.