The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Oct. 02, 2012
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Hoonjoo Na, Hwaseong-si, KR;
Sangjin Hyun, Suwon-si, KR;
Yugyun Shin, Seongnam-si, KR;
Hongbae Park, Seoul, KR;
Sughun Hong, Yongin-si, KR;
Hye-Lan Lee, Hwaseong-si, KR;
Hyung-seok Hong, Ansan-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device includes forming an interlayer dielectric on a substrate, the interlayer dielectric including first and second openings respectively disposed in first and second regions formed separately in the substrate; forming a first conductive layer filling the first and second openings; etching the first conductive layer such that a bottom surface of the first opening is exposed and a portion of the first conductive layer in the second opening remains; and forming a second conductive layer filling the first opening and a portion of the second opening.