The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Jul. 27, 2012
Naoki Ishikawa, Annaka, JP;
Satoyuki Ojima, Annaka, JP;
Hiroyuki Ohtsuka, Annaka, JP;
Takenori Watabe, Annaka, JP;
Shigenori Saisu, Annaka, JP;
Toyohiro Ueguri, Annaka, JP;
Naoki Ishikawa, Annaka, JP;
Satoyuki Ojima, Annaka, JP;
Hiroyuki Ohtsuka, Annaka, JP;
Takenori Watabe, Annaka, JP;
Shigenori Saisu, Annaka, JP;
Toyohiro Ueguri, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
A semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure with a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer. The upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer.