The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Aug. 26, 2008
Tetsuya Nishizuka, Amagasaki, JP;
Masahiko Takahashi, Amagasaki, JP;
Tetsuya Nishizuka, Amagasaki, JP;
Masahiko Takahashi, Amagasaki, JP;
Tokyo Electron Limited, , JP;
Abstract
A semiconductor device manufacturing method, the method including: forming an insulation layer having a protruding portion, the insulation layer having a surface and a rising surface that protrudes upward from the surface, on a semiconductor substrate; forming a conductive layer to cover the insulation layer having the protruding portion; and removing a predetermined region of the conductive layer by patterning the predetermined region according to an etching process using microwave plasma, which uses a microwave as a plasma source, while applying bias power of 70 mW/cmor above on the semiconductor substrate, under a high pressure condition of 85 mTorr or above.