The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Apr. 02, 2013
Stmicroelectronics International N.v., Crolles, FR;
Daniel Benoit, Saint-Ismier, FR;
Laurent Favennec, Villard Bonnot, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Abstract
A method for forming a trench filled with an insulator crossing a single-crystal silicon layer and a first SiOlayer and penetrating into a silicon support, this method including the steps of forming on the silicon layer a second SiOlayer and a first silicon nitride layer, forming the trench, and performing a first oxidizing processing to form a third SiOlayer; performing a second oxidizing processing to form, on the exposed surfaces of the first silicon nitride layer a fourth SiOlayer; depositing a second silicon nitride layer and filling the trench with SiO; and removing the upper portion of the structure until the upper surface of the silicon layer is exposed.