The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Dec. 28, 2012
Jun-youl Yang, Seoul, KR;
Dae-hong Eom, Hwaseong-si, KR;
Byoung-moon Yoon, Suwon-si, KR;
Kyung-hyun Kim, Seoul, KW;
Se-ho Cha, Goyang-si, KR;
Jun-youl Yang, Seoul, KR;
Dae-hong Eom, Hwaseong-si, KR;
Byoung-moon Yoon, Suwon-si, KR;
Kyung-hyun Kim, Seoul, KW;
Se-ho Cha, Goyang-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
According to an example embodiment, a non-volatile memory device includes a semiconductor layer pattern on a substrate, a plurality of gate patterns and a plurality of interlayer insulating layer patterns that are alternately stacked along a side wall of the semiconductor layer pattern, and a storage structure between the plurality of gate patterns and the semiconductor layer pattern. The semiconductor layer pattern extends in a vertical direction from the substrate. The gate patterns are recessed in a direction from a side wall of the interlayer insulating layer patterns opposing the side wall of the semiconductor layer pattern. A recessed surface of the gate patterns may be formed to be vertical to a surface of the substrate.