The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
May. 30, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Mei-Hsuan Lin, Tainan, TW;
Chih-Kang Chao, Tainan, TW;
Chih-Hsun Lin, Tainan, TW;
Ling-Sung Wang, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of manufacturing a semiconductor device is disclosed. The exemplary method includes providing a substrate having a source region and a drain region. The method further includes forming a first recess in the substrate within the source region and a second recess in the substrate within the drain region. The first recess has a first plurality of surfaces and the second recess has a second plurality of surfaces. The method also includes epi-growing a semiconductor material in the first and second recesses and, thereafter, forming shallow isolation (STI) features in the substrate.