The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Mar. 22, 2012
Hitoshi Iwai, Kamakura, JP;
Tomoko Fujiwara, Odawara, JP;
Hideaki Aochi, Kawasaki, JP;
Masaru Kito, Kuwana, JP;
Hitoshi Iwai, Kamakura, JP;
Tomoko Fujiwara, Odawara, JP;
Hideaki Aochi, Kawasaki, JP;
Masaru Kito, Kuwana, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A memory cell comprises a first semiconductor layer, and a first conductive layer. The first semiconductor layer extends in a perpendicular direction with respect to a semiconductor substrate. The first conductive layer sandwiches a charge storage layer with the first semiconductor layer. A control circuit executes a first program operation and then executes a second program operation. The first program operation supplies a first voltage to the body of the memory cell and supplies a second voltage larger than the first voltage to the gate of the memory cell. The second program operation renders the body of the memory cell in a floating state and supplies a third voltage which is positive to the gate of the memory cell.