The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Feb. 10, 2012
Applicants:
Noel Rocklein, Boise, ID (US);
Vishwanath Bhat, Boise, ID (US);
Chris Carlson, Nampa, ID (US);
Inventors:
Assignee:
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/06 (2006.01); H01G 4/10 (2006.01);
U.S. Cl.
CPC ...
Abstract
A capacitor structure includes a storage node; a capacitor dielectric on the storage node; and a plate electrode on the capacitor dielectric. The capacitor dielectric may include a Si-doped ZrO2 layer or crystalline ZrSiOx with a Si/(Zr+Si) content ranging between 4-9% by atomic ratio. The capacitor structure further includes an interfacial TiO2/TiON layer between the storage node and the capacitor dielectric.