The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2014

Filed:

Jun. 01, 2012
Applicants:

Clement Hsingjen Wann, Carmel, NY (US);

Chih-hao Chang, Hsinchu, TW;

Shou Zen Chang, Panchiao, TW;

Chih-hsin Ko, Fongshan, TW;

Yasutoshi Okuno, Kyoto, JP;

Andrew Joseph Kelly, Hsinchu County, TW;

Inventors:

Clement Hsingjen Wann, Carmel, NY (US);

Chih-Hao Chang, Hsinchu, TW;

Shou Zen Chang, Panchiao, TW;

Chih-Hsin Ko, Fongshan, TW;

Yasutoshi Okuno, Kyoto, JP;

Andrew Joseph Kelly, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a semiconductor substrate including an active region including a plurality of device regions. The semiconductor device further includes a first device disposed in a first device region of the plurality of device regions, the first device including a first gate structure, first gate spacers disposed on sidewalls of the first gate structure, and first source and drain features. The semiconductor device further includes a second device disposed in a second device region of the plurality of device regions, the second device including a second gate structure, second gate spacers disposed on sidewalls of the second gate structure, and second source and drain features. The second and first source and drain features having a source and drain feature and a contact feature in common. The common contact feature being a self-aligned contact.


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