The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Dec. 01, 2010
Jean-marc Bethoux, Grenoble, FR;
Fabrice Letertre, Grenoble, FR;
Chris Werkhoven, Gilbert, AZ (US);
Ionut Radu, Crolles, FR;
Oleg Kononchuck, Theys, FR;
Jean-Marc Bethoux, Grenoble, FR;
Fabrice Letertre, Grenoble, FR;
Chris Werkhoven, Gilbert, AZ (US);
Ionut Radu, Crolles, FR;
Oleg Kononchuck, Theys, FR;
Soitec, Bernin, FR;
Abstract
A heterostructure that includes, successively, a support substrate of a material having an electrical resistivity of less than 10ohm·cm and a thermal conductivity of greater than 100 W·m·K, a bonding layer, a first seed layer of a monocrystalline material of composition AlInGaN, a second seed layer of a monocrystalline material of composition AlInGaN, and an active layer of a monocrystalline material of composition AlInGaN, and being present in a thickness of between 3 and 100 micrometers. The materials of the support substrate, the bonding layer and the first seed layer are refractory at a temperature of greater than 750° C., the active layer and second seed layer have a difference in lattice parameter of less than 0.005 Å, the active layer is crack-free, and the heterostructure has a specific contact resistance between the bonding layer and the first seed layer that is less than or equal to 0.1 ohm·cm.