The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Sep. 15, 2009
Markus Müller, Brussels, BE;
Alexandre Mondot, Chatellerault, FR;
Pascal Besson, Notre Dame de Mesage, FR;
Markus Müller, Brussels, BE;
Alexandre Mondot, Chatellerault, FR;
Pascal Besson, Notre Dame de Mesage, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
STMicroelectronics S.A., Montrouge, FR;
NXP B.V., Ag Eindhoven, NL;
Abstract
A method of fabricating a device, including the steps of forming a first silicon oxide layer within a first region of the device and a second silicon oxide layer within a second region of the device, implanting doping ions of a first type into the first region, implanting doping ions of a second type into the second region, and etching the first and second regions for a determined duration such that the first silicon oxide layer is removed and at least a part of the second silicon oxide layer remains.