The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
May. 10, 2011
Weifeng YE, Sunnyvale, CA (US);
Victor Nguyen, Novato, CA (US);
Mei-yee Shek, Palo Alto, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Li-qun Xia, Cupertino, CA (US);
Derek R. Witty, Fremont, CA (US);
Weifeng Ye, Sunnyvale, CA (US);
Victor Nguyen, Novato, CA (US);
Mei-Yee Shek, Palo Alto, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Derek R. Witty, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for the removal of copper oxide from a copper and dielectric containing structure of a semiconductor chip is provided. The copper and dielectric containing structure may be planarized by chemical mechanical planarization (CMP) and treated by the method to remove copper oxide and CMP residues. Annealing in a hydrogen (H) gas and ultraviolet (UV) environment removes copper oxide, and a pulsed ammonia plasma removes CMP residues.