The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Feb. 08, 2013
Unisantis Electronics Singapore Pte. Ltd, Singapore, SG;
Fujio Masuoka, Tokyo, JP;
Shintaro Arai, Tokyo, JP;
Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;
Abstract
In a loadless 4T-SRAM constituted using vertical-type transistor SGTs, a small SRAM cell area is realized. In a static memory cell constituted using four MOS transistors, the MOS transistors are SGTs formed on a bulk substrate in which the drains, gates, and sources are arranged in the vertical direction. The gates of access transistors are shared, as a word line, among a plurality of cells adjacent to one another in the horizontal direction. One contact for the word line is formed for each group of cells, thereby realizing a CMOS-type loadless 4T-SRAM with a very small memory cell area.