The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Mar. 14, 2012
Applicants:
Yu-shan Chiu, New Taipei, TW;
Kuo-hui Su, Taipei, TW;
Inventors:
Yu-Shan Chiu, New Taipei, TW;
Kuo-Hui Su, Taipei, TW;
Assignee:
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/44 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); H01L 21/76831 (2013.01); H01L 23/53238 (2013.01); H01L 21/76843 (2013.01);
Abstract
A through-silicon via (TSV) includes an insulation layer continuously lining a straight sidewall of a recessed via feature; a barrier layer continuously covering the insulation layer; a first portion of a non-continuous seed layer disposed at one end of the recessed via feature; a non-continuous dielectric layer partially covering the straight sidewall of the recessed via feature; and a conductive layer filling the recessed via feature.