The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Aug. 18, 2008
Katherina E. Babich, Chappaqua, NY (US);
Josephine B. Chang, Yorktown Heights, NY (US);
Nicholas C. Fuller, North Hills, NY (US);
Michael A. Guillorn, Yorktown Heights, NY (US);
Isaac Lauer, White Plains, NY (US);
Michael J. Rooks, Briarcliff Manor, NY (US);
Katherina E. Babich, Chappaqua, NY (US);
Josephine B. Chang, Yorktown Heights, NY (US);
Nicholas C. Fuller, North Hills, NY (US);
Michael A. Guillorn, Yorktown Heights, NY (US);
Isaac Lauer, White Plains, NY (US);
Michael J. Rooks, Briarcliff Manor, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for fabricating a transistor having self-aligned borderless electrical contacts is disclosed. A gate stack is formed on a silicon region. An off-set spacer is formed surrounding the gate stack. A sacrificial layer that includes a carbon-based film is deposited overlying the silicon region, the gate stack, and the off-set spacer. A pattern is defined in the sacrificial layer to define a contact area for the electrical contact. The pattern exposes at least a portion of the gate stack and source/drain. A dielectric layer is deposited overlying the sacrificial layer that has been patterned and the portion of the gate stack that has been exposed. The sacrificial layer that has been patterned is selectively removed to define the contact area at the height that has been defined. The contact area for the height that has been defined is metalized to form the electrical contact.